Proximity Effect in Graphene-Topological-Insulator Heterostructures

被引：106

作者：

Zhang, Junhua ^{[1
]}

Triola, C. ^{[1
]}

Rossi, E. ^{[1
]}

机构：

[1] Coll William & Mary, Dept Phys, Williamsburg, VA 23187 USA

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 112卷 / 09期

关键词：

DOUBLE-LAYER GRAPHENE; HEXAGONAL BORON-NITRIDE; DIRAC FERMIONS; COULOMB DRAG; SUPERLATTICES; BI2SE3; TRANSPORT; SURFACE;

D O I：

10.1103/PhysRevLett.112.096802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the cases of both commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that the proximity of the TI induces in graphene a strong enhancement of the spin-orbit coupling that can be tuned via the twist angle.

引用

页数：5

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