In Operando Angle-Resolved Photoemission Spectroscopy with Nanoscale Spatial Resolution: Spatial Mapping of the Electronic Structure of Twisted Bilayer Graphene

被引:10
|
作者
Majchrzak, Paulina [1 ]
Muzzio, Ryan [2 ]
Jones, Alfred J. H. [1 ]
Curcio, Davide [1 ]
Volckaert, Klara [1 ]
Biswas, Deepnarayan [1 ]
Gobbo, Jacob [2 ]
Singh, Simranjeet [2 ]
Robinson, Jeremy T. [3 ]
Watanabe, Kenji [4 ]
Taniguchi, Takashi [5 ]
Kim, Timur K. [6 ]
Cacho, Cephise [6 ]
Miwa, Jill A. [1 ]
Hofmann, Philip [1 ]
Katoch, Jyoti [2 ]
Ulstrup, Soren [1 ]
机构
[1] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
[2] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[3] US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA
[4] Natl Inst Mat Sci, Funct Mat Res Ctr, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[5] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[6] Diamond Light Source, Div Sci, Didcot, Oxon, England
来源
SMALL SCIENCE | 2021年 / 1卷 / 06期
关键词
2D material devices; angle-resolved photoemission spectroscopy with nanoscale spatial resolution; electron transport; twisted bilayer graphene; van der Waals heterostructures;
D O I
10.1002/smsc.202000075
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
To pinpoint the electronic and structural mechanisms that affect intrinsic and extrinsic performance limits of 2D material devices, it is of critical importance to resolve the electronic properties on the mesoscopic length scale of such devices under operating conditions. Herein, angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) is used to map the quasiparticle electronic structure of a twisted bilayer graphene device. The dispersion and linewidth of the Dirac cones associated with top and bottom graphene layers are determined as a function of spatial position on the device under both static and operating conditions. The analysis reveals that microscopic rotational domains in the two graphene layers establish a range of twist angles from 9.8 degrees to 12.7 degrees. Application of current and electrostatic gating lead to strong electric fields with peak strengths of 0.75 V/mu m at the rotational domain boundaries in the device. These proof-of-principle results demonstrate the potential of nanoARPES to link mesoscale structural variations with electronic states in operating device conditions and to disentangle such extrinsic factors from the intrinsic quasiparticle dispersion.
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页数:11
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