Characterization of 4 inch GaAs: Cr wafers

被引：2

作者：

Budnitsky, D. ^{[1
]}

Novikov, V. ^{[1
]}

Lozinskaya, A. ^{[1
]}

Kolesnikova, I. ^{[1
]}

Zarubin, A. ^{[1
]}

Shemeryankina, A. ^{[1
]}

Mikhailov, T. ^{[1
]}

Skakunov, M. ^{[1
]}

Tolbanov, O. ^{[1
]}

Tyazhev, A. ^{[1
]}

机构：

[1] Tomsk State Univ, Funct Elect Lab, 36 Lenin Av, Tomsk 634050, Russia

来源：

JOURNAL OF INSTRUMENTATION | 2017年 / 12卷

关键词：

Materials for solid-state detectors; Radiation-hard detectors; X-ray detectors; X-RAY; DETECTORS;

D O I：

10.1088/1748-0221/12/01/C01063

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy range 20-90 keV is a relevant technological challenge of our time. This will develop a fundamentally new experimental base of scientific research conducted at leading X-ray synchrotron centers with high luminosity beams. The paper analyzes the possibility of using 4 inch gallium arsenide wafers to create a high-resistive GaAs: Cr detector quality structures on their basis and detector arrays of large area.

引用

页数：8

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