Electrical control of the reflectance of porous silicon layers

被引:7
|
作者
Thönissen, M
Marso, M
Arens-Fischer, R
Hunkel, D
Krüger, M
Ganse, V
Lüth, H
Theiss, W
机构
[1] Forschungszentrum Julich, Inst Schnicht & Ionentech, D-52425 Julich, Germany
[2] Rhein Westfal TH Aachen, Inst Phys 1, D-5100 Aachen, Germany
关键词
porous silicon; oxidation; liquid crystal;
D O I
10.1023/A:1009642922253
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC's) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC's will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed.
引用
收藏
页码:205 / 208
页数:4
相关论文
共 50 条
  • [41] Optimization of porous silicon reflectance for solar cell applications
    Coles, AX
    Gerhardt, RA
    Rohatgi, A
    THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 : 557 - 562
  • [42] Reflectance spectrum properties of DBR and microcavity porous silicon
    Kim, Young-You
    Kim, Han-Jung
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2009, 19 (06): : 293 - 297
  • [43] Functionalization control of porous silicon optical structures using reflectance spectra modeling for biosensing applications
    Lorrain, N.
    Hiraoui, M.
    Guendouz, M.
    Haji, L.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (14): : 1047 - 1053
  • [44] Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers
    Charrier, J.
    Alaiwan, V.
    Pirasteh, P.
    Naiar, A.
    Gadonna, A.
    APPLIED SURFACE SCIENCE, 2007, 253 (21) : 8632 - 8636
  • [45] Bulk silicon micromachining using porous silicon sacrificial layers
    Kaltsas, G
    Nassiopoulos, AG
    MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) : 397 - 400
  • [46] Bulk silicon micromachining using porous silicon sacrificial layers
    NCSR Demokritos, Athens, Greece
    Microelectron Eng, 1-4 (397-400):
  • [47] Electrical Properties of Silicon Oxide Nanocomposites of Porous Silicon
    Olenych, I.
    Monastyrskii, L.
    Sokolovskii, B.
    2014 IEEE INTERNATIONAL CONFERENCE ON OXIDE MATERIALS FOR ELECTRONIC ENGINEERING (OMEE), 2014, : 96 - 97
  • [48] Electrical conductivity mechanisms in porous silicon
    Aroutiounian, VM
    Ghulinyan, MZ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 197 (02): : 462 - 466
  • [49] Electrical properties of nanocrystalline porous silicon
    Ciurea, ML
    Iancu, V
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 55 - 64
  • [50] ELECTRICAL CHARACTERIZATION OF OXIDIZED POROUS SILICON
    WU, ZY
    HALL, S
    ECCLESTON, W
    KEEN, JM
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 359 - 362