Generation and recombination in two-dimensional bipolar transistors

被引：4

作者：

Gharekhanlou, Behnaz ^{[1
]}

Khorasani, Sina ^{[1
]}

机构：

[1] Sharif Univ Technol, Sch Elect Engn, Tehran, Iran

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 115卷 / 03期

关键词：

MoS2; Recombination Process; Depletion Layer; Depletion Region; Bipolar Junction Transistor;

D O I：

10.1007/s00339-014-8402-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley-Read-Hall model to study these process. First, we investigate the current-voltage characteristics of a graphone p-n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study.

引用

页码：737 / 740

页数：4

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