Generation and recombination in two-dimensional bipolar transistors

被引：4
|
作者：
Gharekhanlou, Behnaz [1 ]
Khorasani, Sina [1 ]
机构：
[1] Sharif Univ Technol, Sch Elect Engn, Tehran, Iran
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 115卷 / 03期
关键词：
MoS2; Recombination Process; Depletion Layer; Depletion Region; Bipolar Junction Transistor;
D O I：
10.1007/s00339-014-8402-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley-Read-Hall model to study these process. First, we investigate the current-voltage characteristics of a graphone p-n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study.
引用
收藏
页码：737 / 740
页数：4
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