Dispersive processes in the annealing of light- and thermally-induced dangling bonds in a-Si:H

被引：0

作者：

Takeda, K

Hikita, H

Kimura, Y

Yokomichi, H

Morigaki, K

机构：

[1] ELECTROCHEM & CANC INST,CHOFU,TOKYO 182,JAPAN

[2] MEIKAI UNIV,PHYS LAB,URAYASU,CHIBA 279,JAPAN

[3] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

[4] TOYAMA PREFECTURAL UNIV,FAC ENGN,TOYAMA 93903,JAPAN

[5] HIROSHIMA INST TECHNOL,DEPT ELECT ENGN,SAEKI KU,HIROSHIMA 73151,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 200卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The annealing of light- and thermally-induced dangling bonds in a-Si:H exhibits a dispersive kinetics whose time dependence is expressed by a stretched exponential function. The annealing-temperature dependence of the dispersion parameter for both types of dangling bonds is discussed.

引用

页码：486 / 489

页数：4

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