High mobility InGaZnO4 thin-film transistors on paper

We report on the fabrication and the electrical properties of amorphous (alpha-)InGaZnO4 thin-film transistors deposited on cellulose paper by sputtering at room temperature. The 150-mu m-thick paper was used as both a gate dielectric and a substrate for device structural support. The transistors on paper were patterned by lithography and operated in enhancement mode with a threshold voltage of 3.75 V, and exhibited saturation mobility, subthreshold gate-voltage swing, and drain current on-to-off ratio of similar to 35 cm(2) V-1 s(-1), 2.4 V decade(-1), and similar to 10(4), respectively. These results verify that simple cellulose paper is a good gate dielectric as well as a low-cost substrate for flexible electronic devices such as paper-based displays.