A Bluetooth radio in 0.18-μm CMOS

被引:47
|
作者
van Zeijl, P [1 ]
Eikenbroek, JWT
Vervoort, PP
Setty, S
Tangenberg, J
Shipton, G
Kooistra, E
Keekstra, IC
Belot, D
Visser, K
Bosma, E
Blaakmeer, SC
机构
[1] Ericsson Eurolab Netherlands, Bluetooth Technol Licensing Dept, NL-7814 VA Emmen, Netherlands
[2] Ericsson Microelect, Swindon SN5 7UN, Wilts, England
[3] STMicroelect, F-38926 Crolles, France
关键词
bandpass filter; CMOS RF integrated circuits; fractional-N frequency synthesizer; low-noise amplifier; phase-locked loop; poly-phase filters; silicon crosstalk; system on chip (SOC);
D O I
10.1109/JSSC.2002.804350
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the results of an implementation of a Bluetooth radio in a 0.18-mum CMOS process. A low-IF image-reject conversion architecture is used,for the receiver. The transmitter uses direct IQ-upconversion. The VCO runs at 4.8-5.0 GHz, thus facilitating the generation of 0degrees and 90degrees signals for both the receiver and transmitter. By using an inductor-less LNA and the extensive use of mismatch simulations, the smallest silicon area for a Bluetooth radio implementation so far can be reached: 5.5 mm(2). The transceiver consumes 30 mA in receive mode and 35 mA in transmit mode from a 2.5 to 3.0-V power supply. As the radio operates on the same die as baseband and SW, the crosstalk-on-silicon is an important issue. This crosstalk problem was taken into consideration from the start of the project. Sensitivity was measured at -82 dBm.
引用
收藏
页码:1679 / 1687
页数:9
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