Electronic properties of Si/SiGe/Ge heterostructures

被引：4
|
作者：
Abstreiter, G
机构：
来源：
PHYSICA SCRIPTA | 1996年 / T68卷
关键词：
D O I：
10.1088/0031-8949/1996/T68/009
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
High mobility electron and hole channels have been achieved in selectively doped strained Si and Ge layers, respectively. Electronic transport properties of such structures are discussed.
引用
收藏
页码：68 / 71
页数：4
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