BJT Circuits Simulation including Self-Heating Effect using FDTD Method

被引：1

作者：

Amin, A. R. ^{[1
,2
]}

Salehi, A. ^{[1
]}

Ghezelayagh, M. H. ^{[1
]}

机构：

[1] KN Toosi Univ Technol, Dept Elect Engn, POB 16315-1355, Tehran, Iran

[2] Imam Hossein Univ, Tehran, Iran

来源：

2010 ASIA-PACIFIC INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY & TECHNICAL EXHIBITION ON EMC RF/MICROWAVE MEASUREMENTS & INSTRUMENTATION | 2010年

关键词：

FDTD; thermal effect; BJT; GP model; EQUATIONS; SYSTEMS;

D O I：

10.1109/APEMC.2010.5475525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the operation of Bipolar Junction Transistor (BJT) with self-heating effect is simulated by 3-dimansional Finite-Difference Time-Domain (FDTD) method. A three-dimensional simulation program is developed in which the effect of the operating point on the BJT internal temperature rise is included. The simulation software works out the change in temperature by calculating the BJT power dissipation and repeats the simulation process by applying the new obtained temperature into the Gummel-Poon (GP) model. The two consecutive simulation results will determine the simulation iteration. The comparison between the experimental results and those of CAD-Thermal simulation and the FDTD simulation results shows that it is possible to add new features to the FDTD simulation.

引用

页码：924 / 927

页数：4

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