1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+

SiO2 films containing Si nanocrystals (nc-Si) and Er were prepared and their photoluminescence (PL) properties were studied, The samples exhibited luminescence peaks at 0.81 and 1.54 mu m, which could be assigned to the electron-hole recombination in nc-Si and the intra-4f transition in Er3+, respectively. Correlation between the intensities of the two luminescence peaks was studied as functions of Er concentration and excitation power, The present results clearly demonstrate that excitation of Er3+ occurs through the recombination of photogenerated carriers spatially confined in nc-Si and the subsequent energy transfer to Er3+. (C) 1997 American Institute of Physics.