Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra

被引：0

作者：

Grigorieva, N. R. ^{[1
]}

Egorov, A. Yu ^{[3
]}

Zaitsev, D. A. ^{[2
]}

Nikitina, E. V. ^{[3
]}

Seisyan, R. P. ^{[2
]}

机构：

[1] St Petersburg State Univ, St Petersburg 194034, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 06期

关键词：

INTERFERENCE; THICKNESS;

D O I：

10.1134/S1063782614060128

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imposes certain restrictions on the measurement temperature and the quality of the material. Exciton parameters such as the resonance frequency omega (T) and damping coefficient I" may vary under the influence of electric fields, defects present in the crystal, or changes in the chemical composition of the film. If the material characteristics vary along the thickness of the film (the z coordinate), so do the resonance frequency and damping coefficient. Here, the spectra of undoped GaAs layers epitaxially grown on GaAs substrates are investigated at T = 1.7 K. Analysis of the spectra at the exciton absorption edge makes it possible to estimate the "dead-layer" depth, the strength of electric fields, and the concentration of impurities.

引用

页码：754 / 759

页数：6

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