Understanding the signal amplification in dual-gate FET-based biosensors

被引：19

作者：

Ahn, Jae-Hyuk ^{[1
]}

Choi, Bongsik ^{[2
]}

Choi, Sung-Jin ^{[2
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon 34134, South Korea

[2] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2020年 / 128卷 / 18期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; DESIGN CONSIDERATIONS; THRESHOLD VOLTAGE; SILICON; CMOS; SENSITIVITY; PERFORMANCE; NANOISFET; SENSORS; DNA;

D O I：

10.1063/5.0010136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistor (FET)-based sensors allow rapid, label-free electrical detection of chemical and biological species and are easy to use. Dual-gate FET-based biosensors enable sensitive detection with high intensity signal by their distinctive structure based on a combination of solid and liquid gates. However, the underlying mechanism of signal amplification to explain the experimental results has not been well explained with theoretical analysis. In this work, a theoretical approach based on device physics is used to interpret the signal enhancement in dual-gate FET-based biosensors. The analysis is verified with a simulation method for pH sensors based on a well-established commercialized semiconductor 3D technology computer-aided design simulation. The pH sensing parameters are comprehensively investigated as a function of the electrical characteristics of dual-gate FETs: the voltage, current, and normalized current signals are directly correlated with capacitive coupling, transconductance, and subthreshold swing, respectively. Our theoretical analysis provides design guidelines for sensitive dual-gate FET-based biosensors.

引用

页数：8

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