Electron density gradients in ammonothermally grown Si-doped GaN

被引：1

作者：

Cusco, Ramon ^{[1
]}

Domenech-Amador, Nuria ^{[1
]}

Jimenez, Juan ^{[2
]}

Artus, Luis ^{[1
]}

机构：

[1] CSIC, Inst Jaume Almera ICTJA, E-08028 Barcelona, Catalonia, Spain

[2] Univ Valladolid, GdS Optronlab, E-47011 Valladolid, Spain

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 02期

关键词：

RAMAN-SCATTERING; CRYSTALS; NITRIDE; MODES;

D O I：

10.7567/APEX.7.021001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge homogeneity in heavily Si-doped ammonothermal GaN has been studied by confocal micro-Raman measurements. The polarized Raman spectra indicate a high crystalline quality of the sample. On the N-polarity growth sector we observe both branches (L+, L-) of the phonon-plasmon coupled modes. The free-electron density, which is derived from a line-shape fit to the L+ mode, displays an in-depth gradient with a decreasing density when the top surface is approached. The Raman spectra of the Ga-polarity growth sector do not show any trace of phonon-plasmon coupled modes, suggesting a lower Si incorporation and/or the presence of compensating deep levels. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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