SF6 Optimized O2 Plasma Etching of Parylene C

被引:13
|
作者
Zhang, Lingqian [1 ]
Liu, Yaoping [1 ]
Li, Zhihong [1 ,2 ]
Wang, Wei [1 ,2 ]
机构
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China
来源
MICROMACHINES | 2018年 / 9卷 / 04期
基金
北京市自然科学基金;
关键词
Parylene C; SF6; O-2 plasma etching; TECHNOLOGY;
D O I
10.3390/mi9040162
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Parylene C is a widely used polymer material in microfabrication because of its excellent properties such as chemical inertness, biocompatibility and flexibility. It has been commonly adopted as a structural material for a variety of microfluidics and bio-MEMS (micro-electro-mechanical system) applications. However, it is still difficult to achieve a controllable Parylene C pattern, especially on film thicker than a couple of micrometers. Here, we proposed an SF6 optimized O-2 plasma etching (SOOE) of Parylene C, with titanium as the etching mask. Without the SF6, noticeable nanoforest residuals were found on the O-2 plasma etched Parylene C film, which was supposed to arise from the micro-masking effect of the sputtered titanium metal mask. By introducing a 5-sccm SF6 flow, the residuals were effectively removed during the O-2 plasma etching. This optimized etching strategy achieved a 10 mu m-thick Parylene C etching with the feature size down to 2 mu m. The advanced SOOE recipes will further facilitate the controllable fabrication of Parylene C microstructures for broader applications.
引用
收藏
页数:10
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