Surface morphology control of Al-CVD for dual-damascene application

被引:0
|
作者
Iino, T [1 ]
Sugiyama, M [1 ]
Itoh, H [1 ]
Aoyama, J [1 ]
Komiyama, H [1 ]
Shimogaki, Y [1 ]
机构
[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源
ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001) | 2001年
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We investigated the method for suppressing the roughening of the Al film deposited by chemical vapor deposition of Al using dimethyl-aluminium-hydride (DMAE). The study focused on the roughening after the coalescence of the initial nuclei. Increasing the partial pressure of DMAH was effective for reducing the roughness of the film and for improving the gap-filling property. The reason for the improved surface morphology was supposed to be the reduction of the influence of the surface oxidation by the increased coverage of surface adsorbates during the deposition. The adsorbates also served to improve the gap-filling by approaching the kinetics of the deposition to 0-th order. In order to increase the partial pressure in the vicinity of the substrate, the deposition should be surface-reaction-limited, which was achieved by using the nozzle inlet which reduced the thickness of the boundary layer, The film deposited with the nozzle and the optimized condition filled the trenches completely with smooth surface morphology.
引用
收藏
页码:527 / 532
页数:6
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