Determination of optical properties of amorphous and crystalline thin films by spectroellipsometry

被引：1
|
作者：
Yamaguchi, T
Jayatissa, AH
Aoyama, M
Tabe, M
机构：
[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
SIMOX; amorphous; dielectric function; spectroellipsometry;
D O I：
10.1016/S0169-4332(96)00891-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Determination of optical properties of amorphous and crystalline thin films by spectroellipsometry (SE) is discussed. The SE data of SIMOX wafers were analyzed using optical constants of SiO2 and Si and considering a thickness fluctuation in the buried SiO2 layer. From the analysis of data with model dielectric functions, it has been shown that the use of optical constants of bulk-Si for top-Si layer of SIMOX is suitable. It has also been demonstrated that the previously proposed empirical dielectric function [J. Appl. Phys. 77 (1995) 4673] is very useful in the interpretation of optical properties of amorphous materials.
引用
收藏
页码：493 / 498
页数：6
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