Kinetic study of MOCVD III-V quaternary antimonides

被引：0
|
作者：
Peng, RW [1 ]
Wei, GY
Wu, W
Wang, ZG
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
RARE METALS | 1999年 / 18卷 / 01期
关键词：
kinetic study; MOCVD; III-V; quaternary antimonide; photodetector;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The kinetics of MOCVD GaInAsSb and AlGaAsSb was studied by the growth rate as a function of growth temperature and partial pressure of III and V MO species. The diffusion theory was used to explain the mass transport processes in MOCVD III-V quaternary antimonides. On the basis of the discussion about their growth kinetics and epilayer properties, the good quality multi-epilayers of these two quaternary antimonides and their photodetectors and arrays with wavelength of 1.8 similar to 2.3 mu m and detectivities of D* > 10(9) cm Hz(1/2) W-1 were obtained.
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页码：16 / 20
页数：5
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