Kinetic study of MOCVD III-V quaternary antimonides

被引：0
|
作者：
Peng, RW [1 ]
Wei, GY
Wu, W
Wang, ZG
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
RARE METALS | 1999年 / 18卷 / 01期
关键词：
kinetic study; MOCVD; III-V; quaternary antimonide; photodetector;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The kinetics of MOCVD GaInAsSb and AlGaAsSb was studied by the growth rate as a function of growth temperature and partial pressure of III and V MO species. The diffusion theory was used to explain the mass transport processes in MOCVD III-V quaternary antimonides. On the basis of the discussion about their growth kinetics and epilayer properties, the good quality multi-epilayers of these two quaternary antimonides and their photodetectors and arrays with wavelength of 1.8 similar to 2.3 mu m and detectivities of D* > 10(9) cm Hz(1/2) W-1 were obtained.
引用
收藏
页码：16 / 20
页数：5
相关论文
共 50 条
  • [1] Kinetic Study of MOCVD Ⅲ-Ⅴ Quaternary Antimonides
    彭瑞伍
    韦光宇
    吴伟
    王占国
    RareMetals, 1999, (01) : 17 - 21
  • [2] Characterization of GaSb substrate wafers for MOCVD III-V antimonides
    Peng, RW
    Ding, YQ
    Xu, CM
    Wang, XG
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 417 - 420
  • [3] Thermal Conductivities of III-V Antimonides
    ZHU Cheng
    SemiconductorPhotonicsandTechnology, 2004, (03) : 208 - 212
  • [4] The electronic and optical properties of group III-V semiconductors: Arsenides and Antimonides
    Gong, Ruixin
    Zhu, Lianqing
    Feng, Qingsong
    Lu, Lidan
    Liu, Bingfeng
    Chen, Yuhao
    Zhang, Yuanbo
    Zhang, Shiya
    Chen, Yang
    Liu, Zhiying
    COMPUTATIONAL MATERIALS SCIENCE, 2025, 246
  • [5] MOCVD technology of thin III-V compounds heterostructures
    Inst of Electronic Materials, Technology, Warszawa, Poland
    Electron Technol (Warsaw), 2-3 (162-166):
  • [6] PURITY AND PURIFICATION OF SOURCE MATERIALS FOR III-V MOCVD
    OLSON, JM
    KURTZ, SR
    KIBBLER, AE
    JOURNAL OF CRYSTAL GROWTH, 1988, 89 (01) : 131 - 136
  • [7] TERNARY AND QUATERNARY III-V COMPOUNDS - ARE THEY BETTER
    FERRY, DK
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 459 - 459
  • [8] GROWTH AND CHARACTERIZATION OF III-V QUATERNARY ALLOYS
    ANTYPAS, GA
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1976, 172 (SEP3): : 77 - 77
  • [9] Optical study of clustering in III-V semiconductor quaternary solid solutions
    Prutskij, Tatiana
    Seredin, Pavel
    JOURNAL OF LUMINESCENCE, 2021, 231
  • [10] STATE-OF-THE-ART OF MOCVD GROWTH OF III-V COMPOUNDS
    RAZEGHI, M
    DUCHEMIN, JP
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1986, 41 (231): : 257 - 258
12345