1.3 μm quantum dot DFB lasers

被引:0
|
作者
Klopf, F [1 ]
Krebs, R [1 ]
Wolf, A [1 ]
Emmerling, M [1 ]
Reithmaier, JP [1 ]
Forchel, A [1 ]
机构
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using laterally patterned metal gratings, single mode operation of 1.3 mum InAs/GalnAs quantum dot lasers has been achieved. At room temperature the lasers exhibit threshold currents as low as 17 mA, output powers of zip to 8 mW (cw) and very stable single mode emission with side mode suppression ratios of well above 40 dB.
引用
收藏
页码:28 / 29
页数:2
相关论文
共 50 条
  • [41] 1.3 μm GaAs-based quantum well and quantum dot lasers:: Comparative analysis
    Egorov, AY
    Zhukov, AE
    Ustinov, VM
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (05) : 477 - 481
  • [42] Low-Noise Characteristics on 1.3-μm-Wavelength Quantum-Dot DFB Lasers under External Optical Feedback
    Matsuda, M.
    Yasuoka, N.
    Nishi, K.
    Takemasa, K.
    Yamamoto, T.
    Sugawara, M.
    Arakawa, Y.
    2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2018, : 111 - 112
  • [43] Temperature Dependence of Dynamic Properties and Tolerance to Optical Feedback of High-Speed 1.3-μm DFB Quantum-Dot Lasers
    Azouigui, S.
    Cong, D. -Y.
    Martinez, A.
    Merghem, K.
    Zou, Q.
    Provost, J. -G.
    Dagens, B.
    Fischer, M.
    Gerschuetz, F.
    Koeth, J.
    Krestnikov, I.
    Kovsh, A.
    Ramdane, A.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (09) : 582 - 584
  • [44] Wide-temperature-range 10.3 Gbit/s operations of 1.3 μm high-density quantum-dot DFB lasers
    Takada, K.
    Tanaka, Y.
    Matsumoto, T.
    Ekawa, M.
    Song, H. Z.
    Nakata, Y.
    Yamaguchi, M.
    Nishi, K.
    Yamamoto, T.
    Sugawara, M.
    Arakawa, Y.
    ELECTRONICS LETTERS, 2011, 47 (03) : 206 - U704
  • [45] Effect of Be doping in active regions on the performance of 1.3 μm InAs quantum dot lasers
    DU, An-Tian
    Cao, Chun -Fang
    Han, Shi -Xian
    Wang, Hai-Long
    Gong, Qian
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2023, 42 (04) : 450 - 456
  • [46] InAs/GaAs quantum dot laterally coupled distributed feedback lasers at 1.3 μm
    于文富
    赵旭熠
    韩实现
    杜安天
    刘若涛
    曹春芳
    严进一
    杨锦
    黄华
    王海龙
    龚谦
    Chinese Optics Letters, 2023, 21 (01) : 85 - 89
  • [47] GaAs-based 1.3 μm InGaAs quantum dot lasers:: A status report
    Maximov, MV
    Ledentsov, NN
    Ustinov, VM
    Alferov, ZI
    Bimberg, D
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 476 - 486
  • [48] Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
    Zenari, Michele
    Buffolo, Matteo
    De Santi, Carlo
    Norman, Justin
    Hughes, Eamonn T.
    Bowers, John E.
    Herrick, Robert
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Meneghini, Matteo
    ACS PHOTONICS, 2023, 10 (12) : 4188 - 4195
  • [49] High gain and high speed 1.3 μm InAs/InGaAs quantum dot lasers
    Todaro, M. T.
    Salhi, A.
    Fortunato, L.
    Cingolani, R.
    Passaseo, A.
    De Vittorio, M.
    ICTON 2007: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, 2007, : 264 - +
  • [50] The influence of p-doping on the temperature sensitivity of 1.3μm quantum dot lasers
    Massé, NF
    Marko, IP
    Sweeney, SJ
    Adams, AR
    Hatori, N
    Sugarawa, M
    2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 603 - 604