Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001)

被引：3

作者：

Lai, Bolin ^{[1
]}

Zhang, Xiaoqian ^{[1
]}

Lu, Xianyang ^{[1
]}

Yang, Long ^{[1
]}

Wang, Junlin ^{[2
]}

Chen, Yequan ^{[1
]}

Zhao, Yafei ^{[1
]}

Li, Yao ^{[1
]}

Ruan, Xuezhong ^{[1
]}

Wang, Xuefeng ^{[1
]}

Du, Jun ^{[3
,4
]}

Liu, Wenqing ^{[1
,5
]}

Wang, Fengqiu ^{[1
]}

He, Liang ^{[1
]}

Liu, Bo ^{[6
]}

Xu, Yongbing ^{[1
,2
]}

机构：

[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Univ York, Dept Elect, York Nanjing Joint Ctr YNJC Spintron & Nano Engn, York YO10 3DD, N Yorkshire, England

[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[4] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China

[5] Royal Holloway Univ London, Dept Elect Engn, Egham TW20 0EX, Surrey, England

[6] Zhejiang Hikstor Technol Co Ltd, Hangzhou 311305, Zhejiang, Peoples R China

来源：

AIP ADVANCES | 2019年 / 9卷 / 06期

基金：

中国国家自然科学基金; 英国工程与自然科学研究理事会;

关键词：

Semiconducting gallium - Ternary alloys - Virtual storage - Cobalt alloys - III-V semiconductors - Magnetic materials - Optical Kerr effect - Ultrathin films - Aluminum alloys - Gallium arsenide - Magnetic anisotropy - Magnetic storage - Magnetism;

D O I：

10.1063/1.5087227

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single crystalline Co2FeAl films with different thicknesses varying from 3.6 to 10.6 nm have been grown on GaAs (001) using Molecule Beam Epitaxy (MBE). The magnetic characteristics were investigated by in-situ magneto-optical Kerr effect (MOKE). For all the samples, the angle dependent magnetization energy has a relatively high and steep peak around [110] direction which is the hard axis, and a wide basin from [110] to [100] which is the range of the easy axis. More interestingly, the magnetic anisotropy includes a strong uniaxial component due to the Co2FeAl/GaAs interface, a cubic one from Co2FeAl crystalline structure, and an unexpected localized anisotropy term around the [110] direction. All the three anisotropy components overlap their own hard axis around [110] direction resulting in a steep energy barrier, which leads to unusual inverted hysteresis loops around [110]. Our findings add a building block for using half-metallic Co2FeAl thin films in the application of magnetic storage devices.

引用

页数：5

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