Thermoelectric Efficiency Enhanced by Fano Interference in a Quantum Anomalous Hall Insulator Quantum Dot

被引：0
|
作者：
Zhang, Shu-Feng [1 ]
Zhang, Chang-Wen [1 ]
Wang, Pei-Ji [1 ]
Gong, Wei-Jiang [2 ]
机构：
[1] Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China
[2] Northeastern Univ, Coll Sci, Shenyang 110819, Liaoning, Peoples R China
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2019年 / 256卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Fano interference; quantum dots; thermoelectric effect; topological materials;
D O I：
10.1002/pssb.201800629
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Thermoelectric properties of a quantum dot (QD) connected to two metal leads are studied, where the QD is fabricated by the quantum anomalous Hall insulator. Surface states emerge at the edge of the QD due to the bulk-boundary correspondence, while bulk states spread over the whole QD. Fano interference will occur between tunneling via surface and bulk states, which leads to asymmetric lineshape and minimum in the transmission and electric conductance spectrums. Both Seebeck coefficient and thermoelectric figure of merit are enhanced greatly in the energy regime of Fano interference. In addition, it is shown that Fano interference and thermoelectric properties can be well tuned by magnetic field.
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页数：5
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