Quantum Dot Avalanche Photodetector on Si Substrate

被引：0

作者：

Chen, Baile ^{[1
,2
]}

Wan, Yating ^{[2
]}

Xie, Zhiyang ^{[1
]}

Huang, Jian ^{[1
]}

Shang, Chen ^{[3
]}

Norman, Justin ^{[3
]}

Li, Qiang ^{[4
]}

Lau, Kei May ^{[4
]}

Gossard, Arthur C. ^{[2
,3
,5
]}

Bowers, John E. ^{[2
,3
,5
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

[2] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[4] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Clear Water Bay, Hong Kong, Peoples R China

[5] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an InAs quantum dot (QD) avalanche photodetectors (APD) monolithically grown on Si substrate working at 1300 nm. Low dark current and high gain were demonstrated for these QD APDs.

引用

页数：2

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