Synaptic Devices Based on 3-D AND Flash Memory Architecture for Neuromorphic Computing

被引：14

作者：

Noh, Yoohyun ^{[1
,2
]}

Seo, Yungtak ^{[1
]}

Park, Byunggook ^{[1
]}

Lee, Jong-Ho ^{[1
]}

机构：

[1] Seoul Natl Univ, ISRC, Dept Elect & Comp Engn, Seoul 154744, South Korea

[2] SK Hynix Inc, R&D Div, Icheon 467701, Gyeongki, South Korea

来源：

2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) | 2019年

关键词：

AI; Neuromorphic; Synaptic device; 3D stackable; AND flash; NOR flash;

D O I：

10.1109/imw.2019.8739698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new 3-D synaptic device with stackable AND-type Rounded Dual Channel (RDC) flash memory architecture is proposed for neuromorphic computing. The RDC flash devices operate at low power by using the FN program/erase method, utilizes a high speed by a parallel read operation, and performs in a high density with multi-layer stacking. Key fabrication steps are explained and the successful operation of the device in 3-D stacked structure is verified by device simulation. In addition, devices are fabricated by stacking three layers, and their operation is confirmed.

引用

页码：165 / 168

页数：4

共 50 条

[41] A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI
Maoying BAI
Shuhao WU
Hai WANG
Hua WANG
Yang FENG
Yueran QI
Chengcheng WANG
Zheng CHAI
Tai MIN
Jixuan WU
Xuepeng ZHAN
Jiezhi CHEN
Science China(Information Sciences), 2024, 67 (12) : 302 - 310
[42] A Novel Method for the growth of Low Temperature Silicon Structures for 3-D Flash Memory Devices
Mih, Thomas A.
Cross, Richard B.
Paul, Shashi
MATERIALS AND TECHNOLOGIES FOR 3-D INTEGRATION, 2009, 1112 : 265 - 269
[43] Neuromorphic Hardware Based on Artificial Synaptic Devices
Li, J.
Zhao, C.
Man, K.
2022 19TH INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2022, : 187 - 188
[44] CHARACTERIZATION OF RELIABILITY IN 3-D NAND FLASH MEMORY
Lee, Jong-Ho
Joe, Sung-Min
Kang, Ho-Jung
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[45] HfO2-based resistive switching memory devices for neuromorphic computing
Brivio, S.
Spiga, S.
Ielmini, D.
NEUROMORPHIC COMPUTING AND ENGINEERING, 2022, 2 (04):
[46] A memory efficient 3-d DWT architecture
Das, B
Banerjee, S
16TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS, 2003, : 208 - 213
[47] Short-term synaptic plasticity in emerging devices for neuromorphic computing
Li, Chao
Zhang, Xumeng
Chen, Pei
Zhou, Keji
Yu, Jie
Wu, Guangjian
Xiang, Du
Jiang, Hao
Wang, Ming
Liu, Qi
ISCIENCE, 2023, 26 (04)
[48] Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing
Li, Qingxuan
Wang, Tianyu
Hu, Xuemeng
Wu, Xiaohan
Zhu, Hao
Ji, Li
Sun, Qingqing
Zhang, David Wei
Chen, Lin
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (07) : 1089 - 1092
[49] Neuromorphic Computing Using Emerging Synaptic Devices: A Retrospective Summary and an Outlook
Park, Jaeyoung
ELECTRONICS, 2020, 9 (09) : 1 - 16
[50] An In-Situ Dynamic Quantization With 3D Stacking Synaptic Memory for Power-Aware Neuromorphic Architecture
Nguyen, Ngo-Doanh
Tran, Xuan-Tu
Abdallah, Abderazek Ben
Dang, Khanh H. N.
IEEE ACCESS, 2023, 11 : 82377 - 82389

← 1 2 3 4 5 →