New method for self-heating estimation using only DC measurements

被引：0
|
作者：
Mori, C. A. B. [1 ]
Agopian, P. G. D. [1 ,2 ]
Martino, J. A. [1 ]
机构：
[1] Univ Sao Paulo, LSI PSI USP, Sao Paulo, Brazil
[2] Sao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil
来源：
2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2018年
基金：
巴西圣保罗研究基金会;
关键词：
Self-heating effect; Silicon-On-Insulator; UTBB; MOSFETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.
引用
收藏
页码：149 / 152
页数：4
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