Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

被引：2

作者：

Chu, RM ^{[1
]}

Zheng, YD ^{[1
]}

Zhou, YG ^{[1
]}

Han, P ^{[1
]}

Shen, B ^{[1
]}

Gu, SL ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 75卷 / 03期

关键词：

D O I：

10.1007/s003390100978

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrodinger's and Poisson's equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7 x 10(19) cm(-3). In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.

引用

页码：387 / 389

页数：3

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