Epitaxial crystallization and nucleation during MeV-ion beam processing of amorphous GaAs surface layers

被引：6

作者：

Bachmann, T ^{[1
]}

Glaser, E ^{[1
]}

Schulz, R ^{[1
]}

Kaiser, U ^{[1
]}

Safran, G ^{[1
]}

机构：

[1] RES INST TECH PHYS,H-1325 BUDAPEST,HUNGARY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 113卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01306-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

[100]-GaAs wafers were preamorphized in a thin surface layer using 50 keV N-14(+)-ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) were studied as a function of the target temperature using MeV Ar+- or Kr+-ions. Backscattering experiments and electron microscopy show that the IBIEC process is stopped above a critical irradiation temperature due to enhanced ion beam induced nucleation and growth of crystallites. At a fixed dose an optimum irradiation temperature for IBIEC was found, at which the recrystallized layer thickness has a maximum and crystallite formation is negligible. This offers the possibility to crystallize much larger layer thicknesses than approximate to 65 nm which stands for the maximum value reported up to now.

引用

页码：214 / 217

页数：4

共 50 条

[21] TYPE CONVERSION OF EPITAXIAL GAAS-LAYERS AFTER HEAVY-ION MEV IMPLANTATION AND ANNEALING
MOORE, FG
KLEIN, PB
DIETRICH, HB
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1103 - 1105
[22] Interface structure during ion-beam-induced epitaxial crystallization of silicon
Custer, J.S.
Battaglia, A.
Saggio, M.
Priolo, F.
Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1993, 80-81 (pt 2):
[23] INTERFACE STRUCTURE DURING ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON
CUSTER, JS
BATTAGLIA, A
SAGGIO, M
PRIOLO, F
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 881 - 885
[24] Indium reevaporation during molecular beam epitaxial growth of InGaAs layers on GaAs substrates
Mashita, M
Hiyama, Y
Arai, K
Koo, BH
Yao, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4435 - 4437
[25] Indium reevaporation during molecular beam epitaxial growth of InGaAs layers on GaAs substrates
Faculty of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan
不详
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4435 - 4437
[26] Surface processing of amorphous optical materials by argon cluster ion beam
Nikolaev, I., V
Korobeishchikov, N. G.
Roenko, M. A.
Antonenko, A. Kh
ALL-RUSSIAN CONFERENCE XXXIV SIBERIAN THERMOPHYSICAL SEMINAR, DEDICATED TO THE 85TH ANNIVERSARY OF ACADEMICIAN A. K. REBROV, 2018, 1105
[27] Computer simulation of ion-beam induced crystallization and planar growth of amorphous layers in semiconductors
Titov, AI
Voskoboynikov, SP
Kucheyev, SO
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1998, 62 (04): : 867 - 871
[28] Surface effects during ion beam processing of materials
Averback, RS
Ghaly, M
Zhu, H
Caturla, MJ
Marques, L
DelaRubia, TD
ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 3 - 13
[29] Interaction of cadmium vapor with the surface of CdxHg1−xTe layers during molecular beam epitaxial growth on GaAs substrates
A. A. Babenko
D. V. Brunev
Yu. G. Sidorov
V. A. Shvets
M. V. Yakushev
Inorganic Materials, 2008, 44 : 366 - 370
[30] Surface Pattern Formation During MeV Energy Ion Beam Irradiation
Srivastava, S. K.
Nair, K. G. M.
Kannan, R. Kamala
Kamruddin, M.
Panigrahi, B. K.
Tyagi, A. K.
SOLID STATE PHYSICS, PTS 1 AND 2, 2012, 1447 : 741 - 742

← 1 2 3 4 5 →