Epitaxial crystallization and nucleation during MeV-ion beam processing of amorphous GaAs surface layers

被引：6

作者：

Bachmann, T ^{[1
]}

Glaser, E ^{[1
]}

Schulz, R ^{[1
]}

Kaiser, U ^{[1
]}

Safran, G ^{[1
]}

机构：

[1] RES INST TECH PHYS,H-1325 BUDAPEST,HUNGARY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 113卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01306-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

[100]-GaAs wafers were preamorphized in a thin surface layer using 50 keV N-14(+)-ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) were studied as a function of the target temperature using MeV Ar+- or Kr+-ions. Backscattering experiments and electron microscopy show that the IBIEC process is stopped above a critical irradiation temperature due to enhanced ion beam induced nucleation and growth of crystallites. At a fixed dose an optimum irradiation temperature for IBIEC was found, at which the recrystallized layer thickness has a maximum and crystallite formation is negligible. This offers the possibility to crystallize much larger layer thicknesses than approximate to 65 nm which stands for the maximum value reported up to now.

引用

页码：214 / 217

页数：4

共 50 条

[1] Epitaxial crystallization and nucleation during MeV-ion beam processing of amorphous GaAs surface layers
Bachmann, T.
Glaser, E.
Schulz, R.
Kaiser, U.
Safran, G.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996, 113 (1-4): : 214 - 217
[2] Ion beam induced nucleation in amorphous GaAs layers during MeV implantation
Schulz, R
Bachmann, T
Glaser, E
Gaiduk, P
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 203 - 206
[3] ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF AMORPHOUS GAAS ON GAAS(100)
KOBAYASHI, N
HASEGAWA, M
KOBAYASHI, H
HAYASHI, N
SHINOHARA, M
OHTANI, F
ASARI, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 449 - 453
[4] Comparison of nucleation and growth of the crystalline and amorphous phase during MeV-ion irradiation of amorphous/crystalline interfaces
Glaser, E
Fehlhaber, T
Breeger, B
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4): : 426 - 431
[5] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS-SILICON LAYERS
VOELSKOW, M
SKORUPA, W
MATTHAI, J
EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 158 - 160
[6] MeV ion beam induced epitaxial crystallization of Si0.99C0.01 layers on silicon.
Rey, S
Muller, D
Grob, JJ
Grob, A
Stoquert, JP
APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY - PROCEEDINGS OF THE FOURTEENTH INTERNATIONAL CONFERENCE, PTS 1 AND 2, 1997, (392): : 981 - 984
[7] Ion beam induced epitaxial crystallization of buried SiC layers in silicon
Lindner, JKN
Volz, K
Stritzker, B
MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 73 - 78
[8] ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION KINETICS IN ION-IMPLANTED GAAS
JOHNSON, ST
WILLIAMS, JS
NYGREN, E
ELLIMAN, RG
JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6567 - 6569
[9] Ion mass dependence of normalized regrowth rate in MeV ion beam induced epitaxial crystallization
Kinomura, A.
Chayahara, A.
Horino, Y.
Mokuno, Y.
Fujii, K.
Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1995, 106 (1-4):
[10] Ion mass dependence of normalized regrowth rate in MeV ion beam induced epitaxial crystallization
Kinomura, A
Chayahara, A
Horino, Y
Mokuno, Y
Fujii, K
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 277 - 280

← 1 2 3 4 5 →