Structural study of device quality silicon germanium thin films deposited by pulsed RF plasma CVD

被引：3

作者：

Chaudhuri, Partha ^{[1
]}

Bhaduri, Ayana ^{[1
]}

Bandyopadhyay, Atul ^{[1
]}

Williamson, D. L. ^{[2
]}

机构：

[1] Indian Assoc Cultivat Sci, Energy Res Unit, Kolkata 700032, W Bengal, India

[2] Colorado Sch Mines, Golden, CO 80401 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Nanocrystalline silicon germanium; Thin films; Pulsed plasma CVD; DISCHARGES; GROWTH; NANOCRYSTALS;

D O I：

10.1016/j.solmat.2008.11.032

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Microstructures in silicon germanium thin films deposited by pulsed rf plasma CVD have been studied with the help of small-angle X-ray scattering (SAXS) and high-resolution transmission electron microscopy (HRTEM). With lowering of the pulse duty cycle the size of the particles incorporated in the films from the plasma decreases. However, the particles become more symmetric in shape and crystalline in nature. At 75% duty cycle the films have the highest photosensitivity. The increase in SAXS scattering at 75% has been explained by the formation of uniform-size nanocrystallites of SiGe. Urbach energy variation with the duty cycle also suggests the formation of nanocrystallites. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1016 / 1019

页数：4

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