Structural study of device quality silicon germanium thin films deposited by pulsed RF plasma CVD

被引：3
|
作者：
Chaudhuri, Partha [1 ]
Bhaduri, Ayana [1 ]
Bandyopadhyay, Atul [1 ]
Williamson, D. L. [2 ]
机构：
[1] Indian Assoc Cultivat Sci, Energy Res Unit, Kolkata 700032, W Bengal, India
[2] Colorado Sch Mines, Golden, CO 80401 USA
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期
关键词：
Nanocrystalline silicon germanium; Thin films; Pulsed plasma CVD; DISCHARGES; GROWTH; NANOCRYSTALS;
D O I：
10.1016/j.solmat.2008.11.032
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Microstructures in silicon germanium thin films deposited by pulsed rf plasma CVD have been studied with the help of small-angle X-ray scattering (SAXS) and high-resolution transmission electron microscopy (HRTEM). With lowering of the pulse duty cycle the size of the particles incorporated in the films from the plasma decreases. However, the particles become more symmetric in shape and crystalline in nature. At 75% duty cycle the films have the highest photosensitivity. The increase in SAXS scattering at 75% has been explained by the formation of uniform-size nanocrystallites of SiGe. Urbach energy variation with the duty cycle also suggests the formation of nanocrystallites. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1016 / 1019
页数：4
相关论文
共 50 条
  • [1] High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method
    Chaudhuri, Partha
    Bhaduri, Ayana
    Bandyopadhyay, Atul
    Vignoli, Stephane
    Ray, Partha Pratim
    Longeaud, Christophe
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2105 - 2108
  • [2] Pyrrole thin films deposited on paper by pulsed RF plasma
    Sahin, Halil Turgut
    CENTRAL EUROPEAN JOURNAL OF CHEMISTRY, 2007, 5 (03): : 824 - 834
  • [3] Structural properties of amorphous carbon thin films deposited by LF (100 kHz), RF (13.56 MHz), and pulsed RF (13.56 MHz) plasma CVD
    Dong-Sun Kim
    Korean Journal of Chemical Engineering, 2005, 22 : 639 - 642
  • [4] Structural properties of amorphous carbon thin films deposited by LF (100 kHz), RF (13.56 MHz), and pulsed RF (13.56 MHz) plasma CVD
    Kim, DS
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2005, 22 (04) : 639 - 642
  • [5] Deposition of amorphous carbon thin films by pulsed RF plasma CVD
    Kim, DS
    Kang, TW
    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 2005, 38 (08) : 593 - 599
  • [6] OPTICAL CHARACTERIZATION OF THIN SILICON FILMS DEPOSITED BY CVD AND ANNEALED BY PULSED LASER
    LAMPERT, MO
    PONPON, JP
    STUCK, R
    SIFFERT, P
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 169 - 173
  • [7] Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition
    Bhaduri, A.
    Chaudhuri, P.
    Williamson, D. L.
    Vignoli, S.
    Ray, P. P.
    Longeaud, C.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)
  • [8] Growth and characterization of germanium carbon thin films deposited by VHF plasma CVD technique
    Yashiki, Yasutoshi
    Kouketsu, Seiichi
    Miyajima, Shinsuke
    Yamada, Akira
    Konagai, Makoto
    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 1608 - +
  • [9] Local crystal structural modifications in pulsed laser deposited high-k dielectric thin films on silicon and germanium
    Sahiner, Mehmet Alper
    Woicik, Joseph C.
    Kurp, Timothy
    Serfass, Jeffrey
    Aranguren, Marc
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2008, 11 (5-6) : 245 - 249
  • [10] Multilayered silicon silicon nitride thin films deposited by plasma-CVD: Effects of crystallization
    Dutta, J
    Reaney, IM
    Cabarrocas, PRI
    Hofmann, H
    NANOSTRUCTURED MATERIALS, 1995, 6 (5-8): : 843 - 846
12345