Optical characterization of Ag-doped Ge-Sesemiconducting thin films for optoelectronic applications

被引：8

作者：

Mahmoud, A. Z. ^{[1
,2
]}

Mohamed, Mansour ^{[1
]}

机构：

[1] Assiut Univ, Fac Sci, Dept Phys, Assiut 71516, Egypt

[2] Qassim Univ, Coll Sci & Art ArRass, Arrass 51921, Saudi Arabia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 09期

关键词：

AS-SE; DISPERSION PARAMETERS; ELECTRICAL-PROPERTIES; CHALCOGENIDE GLASSES; CONSTANTS; PHOTOCONDUCTIVITY; CONDUCTIVITY; THICKNESS; GAP;

D O I：

10.1007/s00339-019-2895-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present study reports the investigation of the structure and optical properties of Ge10Se90-xAgx (x = 0, 3, 6, 12 and 15 at.%) chalcogenide thin films. This study could help in developing the studied materials for optoelectronic applications. The structural and optical properties of the studied thin films were investigated by X-ray diffraction technique and spectrophotometry, respectively. The structural analysis reveals that the studied films are amorphous in nature. On the other hand, the optical studies showed that the composition effect plays an important role in changing the optical parameters of Ge10Se90-xAgx films. The band gap was found to decrease with increasing the Ag content. In addition, the other optical constants and dispersion parameters were affected with changing the composition. The obtained results were discussed in terms of different proposed models.

引用

页数：9

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