Comparative study of evolution of laser damage in HgCdTe, CdTe & CdZnTe with nanosecond 1.06μm wavelength multiple pulses

被引：0
|
作者：
Gara, A [1 ]
Kapoor, A [1 ]
Tripathi, KN [1 ]
Bansal, SK [1 ]
机构：
[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
来源：
LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2003 | 2003年 / 5273卷
关键词：
laser damage; narrow band semiconductors;
D O I：
10.1117/12.524235
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Evolution of damage in mirror polished samples of HgCdTe, CdTe & CdZnTe has been studied for three fluence regimes-Damage Threshold (F-th), Five Times Damage Threshold (5F(th)), Ten Times Damage Threshold (10F(th)) with multiple pulses of a Q-switched 1.06 mum Nd:YAG laser of 20ns pulse duration. Damage morphology observed under Scanning Electron Microscope (SEM) seem to evolve almost in similar fashion with increasing number of pulses as well as incident energy in HgCdTe and CdZnTe on account of uniform heating through a significant depth through the sample surface whereas in case of CdTe, effect of subsurface superheating is evident. Thermal modeling has been done to explain the evolution of laser damage.
引用
收藏
页码：122 / 128
页数：7
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