Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

被引：3

作者：

Kamyczek, Paulina ^{[1
]}

Bieganski, Piotr ^{[1
]}

Placzek-Popko, Ewa ^{[1
]}

Zielony, Eunika ^{[1
]}

Gelczuk, Lukasz ^{[2
]}

Sciana, Beata ^{[2
]}

Pucicki, Damian ^{[2
]}

Radziewicz, Damian ^{[2
]}

Tlaczala, Marek ^{[2
]}

Kopalko, Krzysztof ^{[3
]}

Dabrowska-Szata, Maria ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

MATERIALS SCIENCE-POLAND | 2013年 / 31卷 / 04期

关键词：

GaAs1-xNx; I-V; C-V; transmittance and reflectance spectra; GAINNAS;

D O I：

10.2478/s13536-013-0144-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report on the optical and electrical studies of single GaAs1-x N (x) epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au-GaAs1-x N (x) contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80-480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.

引用

页码：595 / 600

页数：6

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