Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

被引：3
|
作者：
Kamyczek, Paulina [1 ]
Bieganski, Piotr [1 ]
Placzek-Popko, Ewa [1 ]
Zielony, Eunika [1 ]
Gelczuk, Lukasz [2 ]
Sciana, Beata [2 ]
Pucicki, Damian [2 ]
Radziewicz, Damian [2 ]
Tlaczala, Marek [2 ]
Kopalko, Krzysztof [3 ]
Dabrowska-Szata, Maria [2 ]
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
MATERIALS SCIENCE-POLAND | 2013年 / 31卷 / 04期
关键词：
GaAs1-xNx; I-V; C-V; transmittance and reflectance spectra; GAINNAS;
D O I：
10.2478/s13536-013-0144-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we report on the optical and electrical studies of single GaAs1-x N (x) epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au-GaAs1-x N (x) contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80-480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.
引用
收藏
页码：595 / 600
页数：6
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