Erbium photoluminescence in silica gel films on porous alumina

Erbium-containing sol-gel films were prepared in porous anodic alumina. The films were characterized by photoluminescence measurements, scanning and transmission electron microscopy techniques, and secondary ion mass spectrometry. The structures showed efficient luminescence around 1.54 mu m. The dependence of luminescence intensity on heat-treatment temperature and erbium content was investigated. Erbium-containing sol was demonstrated to penetrate deep into porous alumina; as a result, photoluminescence intensity increases as the alumina layer thickness increases. The structures fabricated in this work are promising candidates for infrared optical converters with peak efficiency at 1.54 mu m.