Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

被引:53
|
作者
Nirupama, V. [1 ]
Gunasekhar, K. R. [2 ]
Sreedhar, B. [3 ]
Uthanna, S. [1 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[2] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
[3] IICT, Inorgan & Phys Chem Div, Hyderabad 500007, Andhra Pradesh, India
关键词
Molybdenum oxide; Magnetron sputtering; XPS; Structural; Electrical and optical properties; MOO3; THIN-FILMS; ELECTROCHEMICAL PROPERTIES; ELECTROCHROMIC PROPERTIES; SUBSTRATE-TEMPERATURE; TRIOXIDE; DEPOSITION;
D O I
10.1016/j.cap.2009.06.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molybdenum oxide films (MoO(3)) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 x 10(-5)-8 x 10(-4) mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically Studied. X-ray photoelectron spectra of the films formed at 8 x 10(-5) mbar showed the presence of Mo(6+) and Mo(5+) oxidation states of MoO(3) and MoO(3-x). The films deposited at oxygen partial pressure of 2 x 10(-4) mbar showed Mo(6+) oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 x 10(-4) mbar showed the presence of (0 k 0) reflections indicated the layered structure of alpha-phase MoO(3). The electrical conductivity of the films decreased from 3.6 x 10(-5) to 1.6 x 10(-6) Omega(-1) cm(-1), the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure frorn 8 x 10(-5) to 8 x 10(-4) mbar, respectively. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:272 / 278
页数:7
相关论文
共 50 条
  • [31] THE EFFECT OF SUBSTRATE-TEMPERATURE ON THE PROPERTIES OF DC REACTIVE MAGNETRON SPUTTERED TITANIUM-OXIDE FILMS
    MENG, LJ
    ANDRITSCHKY, M
    DOSSANTOS, MP
    THIN SOLID FILMS, 1993, 223 (02) : 242 - 247
  • [32] Effect of oxygen partial pressure on the properties of NiO-Ag composite films grown by DC reactive magnetron sputtering
    Reddy, Y. Ashok Kumar
    Reddy, A. Sivasankar
    Reddy, P. Sreedhara
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 583 : 396 - 403
  • [33] Properties of vanadium oxide films prepared by DC reactive magnetron sputtering at different oxygen partial pressures
    Huang, Rengui
    Zhang, Dongping
    Zhang, Ting
    Li, Yan
    Chen, Youtong
    Zhong, Yonglin
    Fan, Ping
    MATERIALS PROCESSING TECHNOLOGY II, PTS 1-4, 2012, 538-541 : 105 - 109
  • [34] Comparison between RF and DC magnetron reactive sputtered molybdenum oxide thin films for gas sensors
    Boyadzhiev, S.
    Lazarova, V.
    Rassovska, M.
    Yordanova, I.
    Yordanov, R.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (10): : 1485 - 1488
  • [35] Bias voltage dependence properties of DC reactive magnetron sputtered indium oxide films
    Babu, PM
    Radhakrishna, B
    Rao, GV
    Reddy, PS
    Uthanna, S
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2004, 6 (01): : 205 - 210
  • [36] RF-sputtered vanadium oxide thin films: Effect of oxygen partial pressure on structural and electrochemical properties
    Park, YJ
    Park, NG
    Ryu, KS
    Chang, SH
    Park, SC
    Yoon, SN
    Kim, DK
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2001, 22 (09) : 1015 - 1018
  • [37] Tuning the optical, electrical resistivity and structural properties of DC magnetron sputtered aluminum zinc oxide films by changing the oxygen flow rate
    Alqahtani, Mohammed S.
    Hadia, N. M. A.
    Mohamed, S. H.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 125 (11):
  • [38] Tuning the optical, electrical resistivity and structural properties of DC magnetron sputtered aluminum zinc oxide films by changing the oxygen flow rate
    Mohammed S. Alqahtani
    N. M. A. Hadia
    S. H. Mohamed
    Applied Physics A, 2019, 125
  • [39] Structural and electrical properties of DC sputtered molybdenum films
    Gordillo, G
    Grizalez, M
    Hernandez, LC
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 51 (3-4) : 327 - 337
  • [40] Influence of oxygen partial pressure on optical and structural properties of RF sputtered ZnO thin films
    Murkute, P.
    Saha, S.
    Pandey, S. K.
    Chatterjee, A.
    Datta, D.
    Chakrabarti, S.
    OXIDE-BASED MATERIALS AND DEVICES VII, 2016, 9749