Field-effect magnetization reversal in ferromagnetic semiconductor quantum wells

被引：13
|
作者：
Lee, B
Jungwirth, T
MacDonald, AH
机构：
[1] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA
[2] Acad Sci Czech Republic, Inst Phys, Prague 16253 6, Czech Republic
[3] Univ Texas, Dept Phys, Austin, TX 78712 USA
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.65.193311
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We predict that a bias-voltage-assisted magnetization reversal process will occur in Mn-doped II-VI semiconductor quantum wells or heterojunctions with carrier-induced ferromagnetism. The effect is due to strong exchange-coupling-induced subband mixing that leads to electrically tunable hysteresis loops. Our model calculations are based on the mean-field theory of carrier-induced ferromagnetism in Mn-doped quantum wells and on a semiphenomenological description of the host II-VI semiconductor valence bands.
引用
收藏
页码：1 / 4
页数：4
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