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Structural and electrical properties of sodium bismuth titanate (Na0.5Bi0.5TiO3) thin films optimized using the Taguchi approach
被引:12
|作者:
Daryapurkar, A. S.
[1
]
Kolte, J. T.
[1
]
Apte, P. R.
[2
]
Gopalan, P.
[1
]
机构:
[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
关键词:
Films;
Dielectric properties;
Ferroelectric properties;
Pulsed Laser Deposition;
Taguchi method;
DEPOSITION;
D O I:
10.1016/j.ceramint.2013.08.019
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Controllable Pulsed Laser Deposition (PLD) parameters have been optimized to grow sodium bismuth titanate (Na0.5Bi0.5TiO3) (NBT) thin films. Target to substrate distance, background gas pressure, substrate temperature, laser fluence, laser rate of repetition, annealing time and NBT targets with and without excess Bi have been chosen as the parameters using a Taguchi L-18 orthogonal array. Taguchi's Signal-to-Noise (S/N) ratios and analysis of variance (ANOVA) tools highlight the relevance of each parameter, and also yield the optimal setting of the parameters. The dominant parameters affecting dielectric properties are oxygen gas pressure and substrate temperature, whereas the distance between target to substrate and laser fluence appear as significant parameters. Fine tuning experiments and a subsequent verification experiment using the dominant and significant parameters result in the best values for the dielectric constant of 735, dielectric loss of 0.07 at 1 kHz and remnant polarization of 21.42 mu C/cm(2). (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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页码:2441 / 2450
页数:10
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