1.3-μm InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Bonding

被引：0
|
作者：
Jhang, Yuan-Hsuan [1 ]
Tanabe, Katsuaki [2 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1138654, Japan
来源：
2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe wafer bonding technology. Our III-V-on-Si bonded laser exhibits room-temperature lasing at 1.3 mu m with current injection through the bonding metal stripe.
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页数：2
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