Ab-initio calculations of electronic, transport, and structural properties of boron phosphide

被引:27
|
作者
Ejembi, J. I.
Nwigboji, I. H.
Franklin, L.
Malozovsky, Y.
Zhao, G. L.
Bagayoko, D. [1 ]
机构
[1] Southern Univ, Dept Phys, Baton Rouge, LA 70813 USA
基金
美国国家科学基金会;
关键词
ORTHOGONALIZED-PLANE-WAVE; III-V; BAND-STRUCTURE; OPTICAL-PROPERTIES; GROUND-STATE; DIAMOND-LIKE; CUBIC BN; BP; SEMICONDUCTORS; ENERGY;
D O I
10.1063/1.4894692
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present results from ab-initio, self-consistent density functional theory calculations of electronic and related properties of zinc blende boron phosphide (zb-BP). We employed a local density approximation potential and implemented the linear combination of atomic orbitals formalism. This technique follows the Bagayoko, Zhao, and Williams method, as enhanced by the work of Ekuma and Franklin. The results include electronic energy bands, densities of states, and effective masses. The calculated band gap of 2.02 eV, for the room temperature lattice constant of a = 4.5383 angstrom, is in excellent agreement with the experimental value of 2.02 +/- 0.05 eV. Our result for the bulk modulus, 155.7 GPa, agrees with experiment (152-155 GPa). Our predictions for the equilibrium lattice constant and the corresponding band gap, for very low temperatures, are 4.5269 angstrom and 2.01 eV, respectively. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Ab-initio pseudopotential calculations of boron diffusion in silicon
    Windl, W
    Bunea, MM
    Stumpf, R
    Dunham, ST
    Masquelier, MP
    SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 91 - 96
  • [22] Ab-initio pseudopotential calculations of boron diffusion in silicon
    Computational Materials Group, Motorola, Inc., M.S. B285, Los Alamos, NM 87545, United States
    不详
    不详
    Mater Res Soc Symp Proc, (91-96):
  • [23] Ab-Initio Study of Structural and Electronic Properties of α-Ge Nanowires
    Tyagi, Neha
    Srivastava, Anurag
    Pandey, Ravindra
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2014, 11 (05) : 1367 - 1373
  • [24] Ab-initio Study of Structural, Electronic and Optical Properties of CdS
    Bziz, Ibrahim
    Atmani, El Houssine
    Fazouan, Najma
    Aazi, Mohamed
    Es-Smairi, Adil
    PROCEEDINGS OF 2019 7TH INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC), 2019, : 154 - 159
  • [25] Ab-initio Electronic and Structural Properties of Rutile Titanium Dioxide
    Ekuma, Chinedu E.
    Bagayoko, Diola
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
  • [26] Ab-initio electronic and structural properties of rutile titanium dioxide
    Ekuma, Chinedu E.
    Bagayoko, Diola
    Japanese Journal of Applied Physics, 2011, 50 (10 PART 1)
  • [27] Structural and electronic properties of lead nanowires: Ab-initio study
    Srivastava, Anurag
    Tyagi, Neha
    Singh, R. K.
    MATERIALS CHEMISTRY AND PHYSICS, 2011, 127 (03) : 489 - 494
  • [28] Structural and Electronic Properties of AlAs Nanocrystal: Ab-Initio Study
    Srivastava, Anurag
    Tyagi, Neha
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2013, 10 (05) : 1222 - 1230
  • [29] Structural, electronic and dynamical properties of GeSi: An Ab-initio study
    Soyalp, F.
    Ugur, S.
    Ugur, G.
    SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, 2007, 899 : 655 - 655
  • [30] Ab-initio calculations for the electronic and magnetic properties of Cr doped ZnTe
    Goumrhar, F.
    Bahmad, L.
    Mounkachi, O.
    Benyoussef, A.
    COMPUTATIONAL CONDENSED MATTER, 2018, 15 : 15 - 20