Robustness improvement of short-circuit capability by SiC trench-etched double-diffused MOS (TED MOS)

被引：0

作者：

Tega, Naoki ^{[1
]}

Tani, Kazuki ^{[1
]}

Hisamoto, Digh ^{[1
]}

Shima, Akio ^{[1
]}

机构：

[1] Hitachi Ltd, Res & Dev Grp, Kokubunji, Tokyo 1858601, Japan

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

SiC; MOS; short-circuit capability; and trench;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3.3-kV SiC trench-etched double-diffused MOS (TED MOS) is designed and fabricated for robust short-circuit (SC) capability. Because of its low-V-over (V-g - V-th) operation, the TED MOS successfully reduces the drain current in saturation region to less than 700 A/cm(2) at SC tests. The low drain current in a saturation region enhances the SC capability of the TED MOS. As a result, the SC endurance time of the TED MOS is 2.8 times longer than that of the conventional SiC DMOS.

引用

页码：439 / 442

页数：4

共 29 条

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