Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1-xGex layer

被引：1
|
作者：
Drozdov, Yu. N. [1 ]
Krasil'nik, Z. F. [1 ]
Lobanova, D. N. [1 ]
Novikov, A. V. [1 ]
Shaleev, M. V. [1 ]
Yablonskii, A. N. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2006年 / 40卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782606030158
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of the predeposition of strained Si1-xGex layers (x <= 20%) on photoluminescence (PL) of self-assembled Ge(Si)/Si(001) islands is studied. A shift of the PL peak related to dome-shaped islands (domes) to lower energies, with respect to the PL peak related to pyramidal islands is observed; this shift is related to a much larger height of the domes compared to that of pyramids. It is found that, as the Ge content in the Si1-xGex layer (x) becomes higher than 0.1, two separate peaks appear in the broad PL band related to the islands; these peaks are attributed to the zero-phonon and phonon-assisted optical transitions in the islands. The appearance of these transitions is caused by a change of the TO-phonon type involved in radiative recombination: a TOGe-Ge phonon is replaced by a TOSi-Ge phonon with a shorter wavelength.
引用
收藏
页码：338 / 341
页数：4
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