Magnetic properties of half-metallic Fe3O4 films

被引：40
|
作者：
Jain, S [1 ]
Adeyeye, AO
Dai, DY
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab, Singapore 117548, Singapore
[2] Data Storage Inst, Singapore, Singapore
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期
关键词：
D O I：
10.1063/1.1651800
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated in a systematic way the magnetic properties of Fe3O4 films grown directly on a Si(001) substrate and on a copper (Cu) buffer layer using the electron beam deposition technique. The effect of the Cu buffer layer thickness on the microstructure and magnetic properties of Fe3O4 has been studied. The effect of annealing on the magnetic properties of Fe3O4 films with various Cu buffer layer thicknesses was also studied. For Fe3O4 films deposited directly on Si(001), we observed two distinct switching fields due to the presence of two magnetic phases which are weakly coupled at the substrate interface. (C) 2004 American Institute of Physics.
引用
收藏
页码：7237 / 7239
页数：3
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