Computer simulation of a-Si:H p-i-n and tandem solar cells current density

被引：0
|
作者：
Darkwi, AY
Ibrahim, K
机构：
来源：
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/SMELEC.1996.616465
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Computer simulation for J-V characteristic curve for single p-i-n a-Si:H and tandem solar cells (a-Si:Wa-Si:H) have been investigated by solving Poisson's equation and continuity equations for charge carriers. In particular, implicit of gap state density in the current voltage characteristic for tandem solar cell was The evaluated current density both the diffusion and drift contribution in each cell. It has been shown fr-om this simulation that optimization of photovoltaic performance can be investigate through the input parameters. This simulation is useful for modeling tandem structure solar cells.
引用
收藏
页码：113 / 117
页数：5
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