Development of silicon containing resists for sub-100nm lithography

被引：7

作者：

Hatakeyama, J ^{[1
]}

Takeda, T ^{[1
]}

Nakashima, M ^{[1
]}

Kinsho, T ^{[1
]}

Kawai, Y ^{[1
]}

Ishihara, T ^{[1
]}

机构：

[1] Shin Etsu Chem Co Ltd, New Funct Mat Res Ctr, Niigata 9428601, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2004年 / 17卷 / 04期

关键词：

bilayer resist; SSQ; silicon-containing olefin; alternating copolymer;

D O I：

10.2494/photopolymer.17.519

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Polysilsesquioxane (SSQ) and alternating-copolymers of silicon containing olefin with maleic anhydride (SiMA) have been employed as backbone polymers of silicon containing bilayer resists. Several kinds of functional alkoxysilanes to form SSQ and silicon containing olefins for SiMA have been synthesized. Fluorinated alcohol as an adhesion unit in SSQ effectively reduces micro swelling in developer. Alternating copolymer structure in SiMA minimizes line edge roughness. Characteristics of oxygen reactive ion etching resistance onto the SSQ and SiMA polymers will be also discussed.

引用

页码：519 / 525

页数：7

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