Direct laser writing below the diffraction limit using spatially and temporally tuned ultrashort pulses

被引:0
|
作者
Zhou, Boyang [1 ]
Kar, Aravindar [1 ]
Soileau, M. J. [1 ,2 ,3 ]
Yu, Xiaoming [1 ]
机构
[1] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA
[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[3] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA
基金
美国国家科学基金会;
关键词
Ultrafast laser; optical breakdown; fused silica; self-trapped excitons; sensitivity; FEMTOSECOND LASER; INDUCED BREAKDOWN; NANOSECOND; IONIZATION;
D O I
10.1117/12.2550450
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the experimental and theoretical study of direct laser writing on dielectrics with reduced feature size by using temporally and spatially separated pulses. Features on the front surface of fused silica within the overlapping area of two laser pulses are obtained by tuning the delay time between the two pulses. The observed dependence of feature position on delays longer than the free-carrier lifetime indicates an ionization pathway initiated by self-trapped excitons. The sensitivity of feature size with the increase of laser intensity is studied by simulating the free-carrier density distribution for different temporal and spatial separation of two laser pulses. It is found that the sensitivity is influenced by the spatial and temporal separation of the two pulses.
引用
收藏
页数:10
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