Quantitative prediction of acceptor concentration reduction in boron doped silicon due to electron irradiation

被引：0

作者：

Everaert, JL ^{[1
]}

Verhaegen, F ^{[1
]}

VanMeirhaeghe, RL ^{[1
]}

Uyttenhove, J ^{[1
]}

Cardon, F ^{[1
]}

机构：

[1] LAB KRISTALLOG & STUDIE VASTE STOF,B-9000 GHENT,BELGIUM

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 117卷 / 04期

关键词：

D O I：

10.1016/0168-583X(96)00346-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The reduction in acceptor concentration due to electron irradiation is determined from C-V characteristics of TixSiy/p-Si Schottky barrier diodes. By using the concept of displacement dose, a method for predicting the reduction in acceptor concentration is successfully applied for an arbitrary primary electron energy ranging from 4 to 14 MeV.

引用

页码：397 / 402

页数：6

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