Quantitative prediction of acceptor concentration reduction in boron doped silicon due to electron irradiation

被引：0
|
作者：
Everaert, JL [1 ]
Verhaegen, F [1 ]
VanMeirhaeghe, RL [1 ]
Uyttenhove, J [1 ]
Cardon, F [1 ]
机构：
[1] LAB KRISTALLOG & STUDIE VASTE STOF,B-9000 GHENT,BELGIUM
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 117卷 / 04期
关键词：
D O I：
10.1016/0168-583X(96)00346-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The reduction in acceptor concentration due to electron irradiation is determined from C-V characteristics of TixSiy/p-Si Schottky barrier diodes. By using the concept of displacement dose, a method for predicting the reduction in acceptor concentration is successfully applied for an arbitrary primary electron energy ranging from 4 to 14 MeV.
引用
收藏
页码：397 / 402
页数：6
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