Simulation of sputtering following ion bombardment at a target step

被引:4
|
作者
Shapiro, MH
Tombrello, TA
机构
[1] Calif State Univ Fullerton, Dept Phys, Fullerton, CA 92834 USA
[2] CALTECH, Div Phys Math & Astron, Pasadena, CA 91125 USA
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 194卷 / 04期
基金
美国国家科学基金会;
关键词
sputtering; sputtered atoms; target step;
D O I
10.1016/S0168-583X(02)00949-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Both binary-collision and molecular-dynamics simulations of sputtering properties usually are carried out using perfectly smooth targets. However, in actual sputtering experiments the target topography most often is not smooth. In this molecular-dynamics simulation study we investigate the effect that a simple step irregularity on the surface of a Cu(100) target has on sputtering properties such as yields, sputtered-atom energy distributions, and sputtered-atom angular distributions. (C) 2002 Elsevier Science BN. All rights reserved.
引用
收藏
页码:425 / 433
页数:9
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